| PART |
Description |
Maker |
| NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| ASPI-0310FS-1R0N-T4 ASPI-0310FS-2R2M-T4 ASPI-0310F |
1 ELEMENT, 1 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
1 ELEMENT, 2.2 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
1 ELEMENT, 4.7 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
1 ELEMENT, 3.3 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
1 ELEMENT, 6.8 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
1 ELEMENT, 10 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 3030-10M, ROHS COMPLIANT
|
Abracon, Corp.
|
| 03650006-1 03650005-3 |
Circular connectors with threaded joint M16 acc. to IEC 61076-2-106, IP40/IP67/IP68
|
Lumberg
|
| SV70 SV120 |
Circular connectors with threaded joint M16 acc. to IEC 61076-2-106, IP40/IP67/IP68
|
Lumberg
|
| WKV71 WKV70 WKV50/6 WKV80 WKV81 |
Circular connectors with threaded joint M16 acc. to IEC 61076-2-106, IP40/IP67/IP68
|
Lumberg
|
| CMSD2005S |
SMD Switching Diode Dual: High Voltage: In Series
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| MBRB10100C MBRF10100C MBRB10100CT MBRF10100CT MBR1 |
Dual High-Voltage Schottky Rectifiers 双高压肖特基整流
CAP/CERAMIC/FIX/SMD/47PF/50V/5%/0603 双高压肖特基整流
MBR10H100CT MBRF10H100CT & MBRB10H100CT Series
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series
MBR10H100CT / MBRF10H100CT & MBRB10H100CT Series
CAP 1.0PF 50V .25 PF NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series MBR10H100CT，MBRF10H100CT
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Rev. Voltage 90 to 100V
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VAISH[Vaishali Semiconductor]
VISAY[Vishay Siliconix]
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
|
